Breakthrough 3D Neuromorphic Device Achieves 95% Accuracy in Handwriting Recognition
![](http://n.sinaimg.cn/spider20240716/506/w300h206/20240716/7155-974874cb1411600555fc13315b389411.jpg)
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A research team led by Dr. Kim Yong-hoon of KIMS and Professor Hwang Hyun-sang of POSTECH developed a three-dimensional ultra-integrated neuromorphic synaptic device using two-dimensional nanomaterials.
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The device controls ion movement for high-performance synaptic properties and achieves handwriting pattern recognition accuracy of 95.22 percent.
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Researchers overcame previous fabrication limitations by directly growing two-dimensional materials at low temperatures.
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The technology facilitates ultra-fast, low-power computations essential for AI semiconductor development.
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Future research will focus on large-area synthesis and commercialization of these electronic devices.
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