Breakthrough 3D Neuromorphic Device Achieves 95% Accuracy in Handwriting Recognition

A research team led by Dr. Kim Yong-hoon of KIMS and Professor Hwang Hyun-sang of POSTECH developed a three-dimensional ultra-integrated neuromorphic synaptic device using two-dimensional nanomaterials.

The device controls ion movement for high-performance synaptic properties and achieves handwriting pattern recognition accuracy of 95.22 percent.

Researchers overcame previous fabrication limitations by directly growing two-dimensional materials at low temperatures.

The technology facilitates ultra-fast, low-power computations essential for AI semiconductor development.

Future research will focus on large-area synthesis and commercialization of these electronic devices.